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Semiconductor diode laser pumping of Nd:LiYF4

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Abstract

Semiconductor diode laser pumping of solid-state lasers has been of much recent interest because of the potential for high efficiency and good frequency stability. We report diode laser pumping of Nd:LiYF4 (YLF). The output of this laser is naturally polarized as opposed to Nd:YAG and can provide larger amplified spontaneous emission limited single-pass gains in amplifiers than Nd:YAG. In addition, it can serve as a master oscillator to injection lock for silicate or phosphate glass systems. Oscillation was demonstrated in a monolithic device. For end pumping near 791 nm with a single stripe diode laser, threshold was 860 µW, and the slope efficiency was 15% with high reflecting and 99.7% reflecting cavity mirrors. At low pump powers, only the high gain polarization oscillated at 1.047 µm in a TEM00 mode, but as the pump power was increased, the orthogonal polarization also oscillated at 1.053 µm output and increased the slope efficiency by increasing the output coupling. Further results are presented.

© 1985 Optical Society of America

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