Abstract

Previous studies have concentrated on the examination of material properties with surface electromagnetic waves (SEW) generated by both the attenuated total reflection (ATR) and the two-prism technique. The two-prism technique enables the SEW to probe properties of the material surface over relatively large distances. This technique is essentially the same technique utilized in the early work of integrated optics. The basic structure used to support the SEW is an interface (or combination of interfaces) between two (or more) media. This basic structure is much simpler than those used in integrated optics. The propagation characteristics depend on the material parameters at the supporting interface. It is possible to vary the dielectric constant and refractive index of the substrate material by applying the proper bias voltage through contacts deposited at the surface. From previous studies made in the far infrared it has been shown that the SEW can propagate over relatively large distances at GaAs-air, GaAs-metal-air, and SrTiO₃-air systems. Theoretical analysis and results are presented which indicate that it is possible to construct a working SEW modulator at various semiconductor and electrooptic material interface systems.

© 1985 Optical Society of America