Abstract

We describe basic properties of SnTe thin films produced by sputtering and by flash evaporation. The unusually high carrier concentration and favorable transmission characteristics of this semiconductor allow its use as a transparent conductive IR coating material. Transmission better than 70% (including substrate losses) was achieved in some cases for SnTe coatings containing an SiO₂ antireflection coating. SnTe coatings tuned for optimum optical performance had resistivities of ~2.7E-4 Ω cm. Carrier mobilities ranged up to 800 cm²/V s. SnTe optical performance and electrical properties were found to be very sensitive to SnTe stoichiometry and to coating purity. Properties and stability were also sensitive to substrate surface quality (roughness). The dependence of optical transmission, electrical resistivity, and carrier mobility on Sn content is described. Effects of substrate temperature and postdeposition heat treatment on these properties are also discussed.

© 1986 Optical Society of America