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Fabrication and characterization of a linear mode confinement modulator on GaAs

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Abstract

The linear mode confinement modulator has been proposed and investigated on Ti:LiNbO3 waveguides.1 This modulator yielded linear modulation with high-modulation depth using a compact design. A linear mode confinement modulator is investigated using a GaAs rib waveguide. The modulator is composed of three parts. The input channel waveguide is connected to the output channel waveguide via an intermediate slab waveguide. In the latter the confinement of the optical waves is varied via an electrooptic effect to modify the transmission from input to output, thus achieving modulation.

© 1987 Optical Society of America

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