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Conferences > OAM > 1987 > THPO > THPO53

Optical and TEM characterization of GaAs/(AI,Ga)As quantum wells and superlattices

J. J. Song, Y. S. Yoon, P. S. Jung, A. Fedotowsky, C. W. Nieh, and T. Vreeland

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Abstract

We have employed nondestructive (optical and x-ray) as well as destructive (transmission electron microscopy) methods in characterizing molecular-beam-epitaxial GaAs/AIxGa1−xAs quantum well structures and superlattices. With photoluminescence excitation (PLE) spectroscopy, we measured optical transitions between the valence and conduction energy levels, which depend on sample parameters. With x-ray double-crystal diffraction measurements, symmetric (400), (200) rocking curves were obtained. The diffraction peak positions and their intensities also depend on the sample parameters. The MBE samples were then destroyed for transmission electron microscopy (TEM).

© 1987 Optical Society of America

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