Abstract

Since double donors in silicon are the solid-state analog of the helium atom, one expects the existence of spin-triplet levels along with the singlet levels commonly observed in IR spectra. In our diffusion-doped Si:Se⁰ samples, a weak line was observed at 2146.38 cm⁻¹, near the expected zero-stress position of the forbidden 1s(³T₂) transition inferred by Bergman et al.¹ but too sharp to have been observed in their 1-cm⁻¹ resolution zero-stress spectra. We have studied the Zeeman splitting and polarization components of this new IR absorption line in Si:Se⁰ and of the corresponding feature in Si:Te⁰ in both the Faraday and Voigt geometries in fields up to 4 T directed along the three principal crystallographic directions. The isotropic splitting into two σ components and one central π component demonstrates the threefold multiplcity of these levels and g values of 1.0 and 1.3 for the Se and Te lines, respectively, agree well with the simple theory of Lande g factors with an orbital g factor of zero.

© 1987 Optical Society of America