Abstract

We have examined the photoresponse and avalanche multiplication of several GaAs/AlGaAs superlattice avalanche photodiodes. The diodes were made of material from four separate MBE-grown wafers containing superlattices with periods of 200, 400, 700, and 1000 Å. Each diode contained twenty periods of the superlattice. We compared the effect of the superlattice period with background doping density in the avalanche region and capping layer thickness on the avalanche process. These structures have exhibited gains up to 100.

© 1988 Optical Society of America