Abstract
All-optical switching has been demonstrated for the first time in a single-mode GaAs/AIGaAs strip-loaded nonlinear directional coupler (NLDC). The sample is grown by molecular beam epitaxy (MBE), and the guiding layer consists of sixty periods of GaAs/AIGaAs multiple quantum wells with 100-Å thickness for both the wells and barriers. The channels are formed by reactive ion etching of the top AIGaAs layer with a photoresist mask. The cleaved ends of the NLDC allow light to be end-fire coupled into the guides. A microscope objective with a numerical aperture of 0.65 is used to focus the light into the waveguides, and the output intensity profiles are monitored on an oscilloscope screen by means of a line scan. Linear cross coupling is observed at low input intensities, ~870-nm wavelength, and most light can be switched back into the input channel with a contrast ratio >3. Using picosecond pulses, the effect of carrier diffusion is negligible.
© 1988 Optical Society of America
PDF ArticleMore Like This
R. Jin, C. L. Chuang, H. M. Gibbs, S. W. Koch, J. N. Polky, and G. A. Pubanz
PD31 International Quantum Electronics Conference (IQEC) 1988
YI CHEN, PAUL R. BERGER, PALLAB BHATTACHARYA, JAGADEESH PAMULAPATI, and G. C. Vezzoli
WE4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1988
R. JIN, G. L. CHUANG, HYATT M. GIBBS, M. WARREN, J. SOKOLOFF, P. HARTEN, J. N. POLKY, and G. A. PUBANZ
ME1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989