Abstract

We investigate the resonance fluorescence spectrum of a bulk semiconductor subject to an injection current and an arbitrarily intense electromagnetic wave. We assume that the electronhole system is in quasiequilibrium due to the rapid carrier-carrier intraband scattering. The analysis is based on the generalized Bloch equations¹ for semiconductors. Although the fast carrier scattering heavily damps the electronic coherence, it nevertheless allows the medium to follow adiabatically the relatively slowly varying field fluctuations. As a consequence, the resonance fluorescence spectra reveal asymmetric dips generated by pump scattering off carrier-density pulsations induced by the interference between the pump and vacuum mode. Similar to the two-level resonance fluorescence and probe absorption, the semiconductor probe absorption coefficient equals the difference between the resonance fluorescence and reabsorption coefficients. The results are important for nonlinear semiconductor spectroscopy and semiconductor laser instabilities.

© 1988 Optical Society of America