Abstract

In n–i–p–i and multiple quantum well hetero-n–i–p–i structures, semiconductor depletion regions, and hetero-Schottky barriers, as well as in photo­refractive materials, transport of optically induced carriers within internal or externally applied fields alters these fields. Field-dependent effects on optical transmission such as the linear electrooptic effect, electroabsorption, and electrorefraction cause effective optical nonlinearities which may be very large and materials very sensitive. As an example, in the hetero-n–i–p–i structure, refractive-index changes as large as –0.01 occur at intensity levels of only 0.7 mW/cm².

© 1988 Optical Society of America