Abstract

Recently, we reported extensive measurements of the energy transfer in picosecond two-beam coupling experiments in semi-insulating GaAs:EL2.¹ In that case, a Nd:YAG laser with a pulse duration of 30 ps was used to generate a grating with a period of 1.7 µm in the semiconductor. The experiment was conducted in a regime where the laser pulse duration is an order of magnitude larger than the time required for the electrons to diffuse one grating period. In these conditions a linear dependence of the photorefractive gain with incident fluence was noted until a saturation fluence of ~1 mJ/cm² was exceeded. Similar results have also been obtained for the doped semiconductors CdTe:V and InP:Fe.

© 1989 Optical Society of America