Abstract

Large light-induced changes in absorption have been observed in single hetero structure Schottky barrier devices consisting of In(Fe)/InGaAsP(un)/Au. The Schottky barrier forms a depletion region at the metal-semiconductor interface. Excess photogenerated carriers in the epilayer (hv = E_g) are spatially separated: electrons are trapped in the epilayer and holes are removed, resulting in long carrier lifetimes and large excess electron concentrations.

© 1989 Optical Society of America