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Relationship of electromagnetic reflection and refraction to quantum-mechanical transport in semiconductor heterostructures

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Abstract

Electromagnetic reflection and refraction at a boundary between lossless dielectrics is well known for commonly available materials with differing permittivity (ε) and the same permeability (µ). In this case, the expressions for the reflectivity of TE and TM polarizations have different functional forms with a Brewster angle for TM polarization but not for TE polarization. For an interface between generalized dielectrics (differing ε and µ), the TE and TM reflectivities have the same form where one, both, or neither of the polarizations can have a Brewster angle. By defining separate phase and amplitude indices, common expressions can be used for the TE and TM reflectivities.

© 1990 Optical Society of America

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