Abstract
We use excitonic effects in thin GaAs quantum-well stripline samples to generate, propagate, and detect femtosecond electrical signals.1 The time dependence of the initial photocurrent transient depends sensitively on the bias and excitation conditions. One possible explanation for this is a velocity-overshoot effect, which is strong because the carriers that we excite are initially at the band gap, with no excess energy. In this presentation, we point out that in metal-semi-insulating semiconductor contact systems, the actual electric field experienced by the quantum-well excitons can be highly nonuniform,2 making quantitative comparison with theory difficult. In fact, Monte-Carlo studies of carrier transport should be developed to account for this effect.
© 1990 Optical Society of America
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