Abstract

The behavior of the optical recording properties of 55 nm Te thin films on glass substrates has been investigated as a function of singly ionized He beam energies, with an observed decrease of the writing threshold of the thin films in the 23–45 keV range. However, the implanted dose within the Te thin films was always maintained at a fixed value, requiring the total implanted dose for the film–substrate system to increase at higher energies. The results of our study, which investigated implantations at various ion doses and beam energies in the 13–55 keV range, show that the total implanted dose within the film–substrate system is important in the observed decrease of the writing threshold of the thin films. Increases of the ion-beam energy at a fixed total dose produce no decrease in the writing threshold. Furthermore, measurements carried out as a function of planted doses at two fixed energies of 13 and 32 keV confirm that the total implanted dose for the film–substrate system is also important in the determination of a critical dose above which the writing threshold decreases.

© 1990 Optical Society of America