AlGaAs photonic integrated circuits fabricated using chemically assisted ion beam etching

W. J. Grande; John E. Johnson; C. L. Tang

doi:10.1364/OAM.1990.ThUU4

Optical Society of America Annual Meeting
Technical Digest Series (Optica Publishing Group, 1990),
paper ThUU4
•https://doi.org/10.1364/OAM.1990.ThUU4

AlGaAs photonic integrated circuits fabricated using chemically assisted ion beam etching

W. J. Grande, John E. Johnson, and C. L. Tang

OSA Annual Meeting 1990

Boston, Massachusetts United States
4–9 November 1990
ISBN:

From the session
Joint OSA/LEOS Session on GaAs Integrated Optical Devices (ThUU)

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W. J. Grande, J. E. Johnson, and C. L. Tang, "AlGaAs photonic integrated circuits fabricated using chemically assisted ion beam etching," in Optical Society of America Annual Meeting, Technical Digest Series (Optica Publishing Group, 1990), paper ThUU4.

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Abstract

Photonic integrated circuits with a complete set of active and passive devices have been fabricated using a novel dry etching process in AlGaAs. Devices integrating lasers, waveguides, beamsplitters, 90° bends, and photodetectors are demonstrated.

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