Abstract

We study the ultrafast gain dynamics of visible wavelength InGaAIP semiconductor diode lasers. Our experimental configuration makes use of an ultrafast dye laser system that produces a train of pulses forming a suitable signal with which to probe these diode lasers. When the pulse train is coupled into the active region of the diode laser, we observe a phase locking of a self-induced oscillation in the diode laser to the dye laser pulse train. This locking extends over a large range of probe wavelengths. In addition to this entrainment, we observe the gain recovery dynamics of the diode laser, which can in some situations be quite complicated. We have studied the properties of the gain media as a function of several parameters, including probe pulse duration, power and wavelength, as well as temperature of the diode laser. We compare the results obtained for both gain guided and index guided lasers, as well as for both traveling and standing wave diode laser amplifiers.

© 1991 Optical Society of America