Abstract

Silicon-on-insulator (SOI) structures are of interest for VLSI compatible integrated optoelectronics. We observe optical limiting and switching processes in SOI waveguides due to Kerr type nonlinearities in the region of the input coupler. Spatial and temporal interactions between the incident field, guided field, and the grating coupler influence the intensity dependent coupling efficiency of the structure.¹ To study these effects experiments were performed, utilizing a pulsed Nd:YAG laser (1.06 μm) to couple into a lightly doped silicon on SiO₂ waveguide via a grating coupler. Measurements were taken at various detuning angles, input energies, and input beam locations with respect to the input coupler. Simultaneous monitoring of the input signal, output signal, and transient photoconductivity allowed us to observe the carrier dynamics during the nonlinear interaction process.

© 1991 Optical Society of America