Abstract

The rare earth-doping of planar and channel glass waveguide structures is evolving into a new device technology that is distinct from rare earth-doping fibers. This is particularly true since the VLSI processing techniques used for waveguide fabrication permit selective doping and formation of complex optical circuits. Such geometry-specific doping is important, for example, in making passive feed waveguides that direct laser diode pump light to active areas of the device. Dopants such as Nd, Er, Pr, Yb, and Ho permit a wide range of operating wavelengths. Green up-conversion lasers should be feasible with Ho as a dopant. Nd will provide laser action near 1060 nm and 1300 nm. Er enables amplification and lasing near 1500 nm. Pr has several lasing transitions through the visible red to near infrared. Some of the many potential uses for this technology include optical data storage read/write, super-luminescent sources for optical gyros, amplifying fan-out structures for distribution networks, compact single frequency lasers, and eye-safe lasers.

© 1991 Optical Society of America