Abstract

Laser-induced chemical vapor deposition of thin films has many features, such as a low temperature reaction to produce photodissociation to deposit films, etc. Also, diamond film has the characteristics of high hardness, good heat conduction, etc., so it is of considerable practical importance in mechanical and electrical industries, semiconductor industry, etc. In our experiment, a 200-mJ/pulse 308-nm XeCl excimer laser light (EMG201) was used for irradiation. C₆H₆ or C₇H₈ was selected as a source gas, H₂ was used as diluted gas. The pressure of the reactor was 10–20 torr, when it contained only a source gas; otherwise, it was ~40 torr when it had a source gas and H₂. The gases were inert. The substrate was silicon wafers of (111) plane. The substrate was heated by a heating element, and its highest temperature was below 150° C. During deposition, laser-induced fluorescence and laser ionization spectroscopy were used to analyze the different photodissociated products. Also, x-ray diffraction, Raman spectra, scanning electron spectroscopy, etc., were used to analyze the composition of the film. From the above analysis, we obtained our diamondlike film.

© 1991 Optical Society of America