Abstract
Semiconductor-doped glass (SDG) is an attractive nonlinear material because of its relatively large optical nonlinearity and fast response. The photoluminescence spectrum of SDG usually consists of two bands: one is a less intense and higher energy band, which is assigned to the direct carrier recombination and the other is a lower energy broader band, which seems to be caused by a trapped carrier recombination. The latter has a relatively slow decay and is required to be illuminated for fast nonlinear response.
© 1991 Optical Society of America
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