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Propagation characteristics of GaAs/AlGaAs QW ridge waveguides

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Abstract

The effect of a quantum well in waveguides with simple geometries can be calculated with a simple model,1 but waveguides with more complex geometries require a more detailed calculation. The mode field distribution across the waveguide will be determined by the shape of the waveguide, and the electrostatic field experienced by the QW layer from voltage applied across the waveguide will be nonuniform. Therefore, the guided wave experiences different perturbations at different positions of the QW, which will affect the total absorption and phase. In the present work, we use the finite element method and perturbation theory to determine excitonic contributions to the propagation characteristics of a QW ridge waveguide for different voltages across the waveguide. The results show that a simple slab model overestimates the attenuation and phase change for wavelengths smaller than the peak absorption wavelength and underestimates them for wavelengths larger than the peak absorption wavelength.

© 1991 Optical Society of America

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