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Visible-light (657 nm) InGaP/InAlGaP strained quantum-well vertical-cavity surface-emitting laser

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Abstract

We report the first visible-light (657 nm) operation of a vertical-cavity surface-emitting laser in a photopumped intrinsic structure. Vertical-cavity surface-emitting lasers (VCSELs) have recently attracted a great deal of interest because of their surface-normal operation, potential for extremely low-threshold currents, ease of fabrication of closely-spaced 1- and 2-dimensional arrays and integration with other devices such as transistors for photonic switching applications. To date operation of vertical-cavity surface-emitting laser has been limited to the range between 770 nm and 980 nm. We have extended this range into the visible where numerous applications exist including: ultrafast holographic memory, visible laser projection displays, and local area networks based on inexpensive, rugged plastic fibers. The structure was grown using low-pressure metalorganic vapor phase epitaxy in a single growth sequence on 6° misorientated (100) GaAs substrates. The active region consists In0.54Ga0.46P strained quantum wells and In0.48(AlyGal-y)0.52P (y=0.7-1.0) graded barriers whereas the distributed Bragg reflectors are AlAs/Al0.5Ga0.5As. Room temperature optical-pump lasing was achieved with a very low threshold power (~ 1 kW/cm2 average power, ~ 4 ps pulses, 82 MHz), comparable to our best AlGaAs/GaAs VCSELs operating at 850 nm. This work effectively demonstrates the viability of visible-VCSEL technology, and opens the door for a broad range of new materials and device physics research and visible-light optoelectronic applications. The SNL research is supported by DOE contract No. DE-ACO4-76DP00789.

© 1991 Optical Society of America

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