Abstract

The In_xGa_1-xAs/GaAs strained layer system can be used to access the 0.9–1.1-µm wavelength range, including the 0.98 µm pump wavelength for Er-doped silica fiber amplifiers. We review the metallurgy and physics of strained layers, and outline the design criteria and reliability of broad area strained layer In_xGa_1-xAs/GaAs lasers, including high power fundamental mode cw 0.98-µm buried heterostructure laser diodes and antiguided in-phase locked arrays.

© 1991 Optical Society of America