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Optical bistability in semiconductor CdHgTe etalon

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Abstract

We have observed bistability of the n-type CdxHg1−xTe in Auger-dominated in the following conditions: the input probe beam, obtained by splitting the CO2 laser with a ZnSe splitter, was incident upon the CdHgTe detector 1. The output probe beam, passing through the Fabry-Perot etalon, was detected by the CdHgTe detector 2. All beams were chopped using a mechanical chopper with a tunable mark/space ratio between 20:1 at a high speed synchronous motor. The signals of the incident and transmission intensity synchronously detected by using the CdHgTe detectors at 77 K were displayed on an oscilloscope. Our specimen was n-type CdxHg1−xTe (x = 0.225) at 77 K, the intrinsic carrier concentration n = 9.8 × 1014 cm-3, the mobility μ = 3.15 × 104 (cm2/V sec). The absorption coefficient α = 72 cm was polished plane parallel to form an etalon 215 μm thick, the reflectivities of which are RF = RB = R = 32%. In our experiment, the incident intensity I is 750 W/cm2 and both the laser mode and power stability met the standards.

© 1991 Optical Society of America

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