Abstract

Modern epitaxial growth techniques, such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), now allow device quality undoped and n-type ZnSe layers to be grown routinely, typically on GaAs substrates. In addition, low resistivity p-type ZnSe has been demonstrated using Li and N (NH₃) dopants, (for example, Refs. 1–5). For a time, there seemed to be an upper limit on the attainable net acceptor concentration (N_A-N_D) of about 10¹⁷ cm^-3. Recently, however, significantly higher N_A-N_D has been achieved in ZnSe:N grown by MBE using nitrogen free radicals produced by an rf plasma source. Thus far, the largest net acceptor concentration in ZnSe layers using this doping technique is 1.0 × 10¹⁸ cm^-3, which is an order of magnitude greater than that ever obtained in Li-doped samples. Using these technologies, rudimentary blue light emitting diodes (LEDs) have been reported by several laboratories. Here we present what we believe is the first demonstration of diode lasers fabricated from wide band gap II–VI materials. These devices emit coherent light at 490 run (blue-green) from a ZnSe-based single quantum well structure under pulsed current injection at 77 K. Details of structure, output, and typical optical spectra are presented.

© 1991 Optical Society of America