Abstract

Problems exist in characterizing high-frequency disordering in semiconductor microstructures, such as those used in quantum-well lasers. Global quantities, such as quantum efficiency and spectral characteristics averaged over the entire sample, are usually measured without detailed determination of their spatial distribution. High spatial resolution can be obtained with transmission electron microscopy, but the sample is sacrificed and the parameters of interest are measured only indirectly by using electron interactions. The use of a confocal microscope to image the fluorescence of a high-frequency (0.4 μm) spatially disordered quantum well is demonstrated. The distribution of the radiative recombination and the efficiency of the disordering process can be directly inferred with this approach. The technique has application to the fabrication and optimization of resonant-periodic-gain semiconductor lasers.

© 1992 Optical Society of America