Abstract

The properties of Cr-doped LiSrAIF₆, or Cr:LiSAF, that significantly affect laser design considerations have been investigated. We examined LiSrA_1–xCr_xF₆ samples having doping levels ranging from x = 0.01 to x = 1 and found that the cw laser properties are not adversely affected by the Cr-doping level. In essence, the optimum Cr-doping level can be chosen to match the requirements of each application. In fact, the fully substituted system, LiSrCrF₆, or LiChrom, can be pumped at 790 nm, far out in the absorption wing, and nevertheless efficiently generate laser light. This is possible, in part, because the emission lifetime of LiChrom is nearly the same as that of a lightly doped sample. It is noteworthy that the highly doped version of Cr:LiSAF permits the use of AlGaAs laser diodes operating in the 750-780 nm range to serve as useful pump sources.

© 1992 Optical Society of America