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Low-loss ultrafast all-optical switching in a GaAIAs integrated interferometer at half the band gap

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Abstract

Recent work on the nonresonant refractive optical nonlinearity in semiconductors has shown that the optimum operating photon energy is below half the band-gap energy. The nonlinearity is ultrafast, and there is relatively low loss under these operating conditions. We have employed the nonresonant refractive nonlinearity in an all-optical switch based on an integrated asymmetric Mach–Zehnder interferometer fabricated in Al0.18Ga0.82As optical waveguides. The device has been demonstrated in the 1.55 μm region employing ultrashort pulses of around 330 fs from a KCl:Tl color center laser. The device requires a π phase shift for more than 80% switching, which is achieved at input intensities of 3.92 GW/ cm2 in the waveguide; this corresponds to an intensity dependent refractive index n2 of 5.86 × 10-14 cm2/W. For the 330 fs pulse employed in the operation of the switch, the switching energy is approximately 100 pJ, although the absorbed energy through the residual two photon absorption is ≈5 pJ.

© 1992 Optical Society of America

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