Abstract

Fast electrical pulses can be routinely generated with short pulse lasers and electro-optic sampling. We extend these techniques to allow measurement of an electrical pulse before any dispersion mechanisms can affect the pulse. We show that pulses ~250 fs FWHM (full width at half maximum) can be generated in semi-insulating GaAs and that 200 fs FWHM can be generated in low temperature grown GaAs.¹ Previous results for undamaged silicon on sapphire were limited by transmission line dispersion to a rise time of 260 fs.² System limited electrical rise times (10–90%) of ~145 fs and optical cross correlation (at the sample) of ~110 fs are measured. Short pulses are generated for both uniform and single electrode illumination.

© 1992 Optical Society of America