Abstract
We demonstrated a transmission electroabsorption modulator operating near 1.3 µm grown on GaAs. This achievement has technological applications, particularly for fiber optic communication. The longest wavelength modulation previously achieved in InGaAs/GaAs was 1.06 µm.1 We achieved sharp excitonic resonances near 1.3 µm in InGaAs/GaAs with molecular beam epitaxy using a slowly graded InGaAs buffer. The p-i-n structure included 30 75-Å In0 5Ga0 5 As quantum wells with 35-Å Al0 33Ga0 67As barriers. Room temperature I-V measurements show excellent leakage characteristics. 300-K absorption spectra show a clear exciton at 1.25 µm at zero bias and pronounced quantum confined Stark effect. The device functions as a transmission modulator with an insertion loss of 3 dB and a maximum ΔT/T of 17% at 1.25 µm and 12% at 1.3 µm. Photocurrent measurements exhibit negative differential conductivity, which is useful for operation as a self-electro-optic device at 1.25 µm.
© 1992 Optical Society of America
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