Abstract

Since coming to JPL four years ago, I have been concerned with space applications of focal plane array detectors and their fabrication with molecular beam epitaxy. I have chosen to talk about a fascinating part of this work, device structures with monolayer features. First, we have had notable success growing a boron δ-doped layer on the back side of silicon charge coupled devices (CCDs) provided by EG&G Reticon. This layer changes the surface potential so that the photoelectrons generated near the surface are not lost. We add a total of about 3 nm of material efficiencies out to 250 nm for these CCDs, which matched the efficiency expected when limited by the transmittance into the silicon. I will discuss the possible use of these CCDs for UV imaging in forthcoming space missions. This will include an overview of UV imaging with the Hubble Space Telescope. In the last part of the talk, I will discuss the use of thin quantum wells made with strained (4% lattice mismatched) InAs layers in GaAs. I will illustrate some of their properties in reviewing the optical luminescence and absorption properties of 1,2,3, and 4 monolayer quantum wells.

© 1992 Optical Society of America