Electroabsorption modulation at 1.27-1.31 µm in multiple narrow In0.53Ga0.47As/Al0.48In0.52 as quantum wells

J. V. D. Veliadis; Y.J. Ding; J. B. Khurgin

doi:10.1364/OAM.1993.MUU.1

OSA Annual Meeting
Technical Digest Series (Optica Publishing Group, 1993),
paper MUU.1
•https://doi.org/10.1364/OAM.1993.MUU.1

Electroabsorption modulation at 1.27-1.31 µm in multiple narrow In_0.53Ga_0.47As/Al_0.48In_0.52 as quantum wells

J. V. D. Veliadis, Y.J. Ding, and J. B. Khurgin

OSA Annual Meeting 1993

Toronto Canada
3–8 October 1993
ISBN:

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Quantum-Well Devices and Applications (MUU)

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J. V. D. Veliadis, Y. J. Ding, and J. B. Khurgin, "Electroabsorption modulation at 1.27-1.31 µm in multiple narrow In0.53Ga0.47As/Al0.48In0.52 as quantum wells," in OSA Annual Meeting, Technical Digest Series (Optica Publishing Group, 1993), paper MUU.1.

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Abstract

Although multiple quantum well (QW) modulators near 1.3 µm have been implemented¹, further study is required for use in fiber optic communication.

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