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Optimization of InGaAs/InP-quantum-well heterostructures for self-electro-optic-effect devices for 1.5 µm operation

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Abstract

The electro-optic properties of InGaAs/lnP quantum well heterostructures are important for telecommunication applications since their operation wavelength range is around 1.5 µm1.

© 1993 Optical Society of America

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