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Study of the intensity dependence of the internal electric field in a GaAs/AlxGa1–xAs multiple-quantum-well nipi by means of photoreflectance

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Abstract

We have used the two-pump/one-probe photoreflectance method [1] to measure the internal electric field in a GaAs/AlxGa1–xAs multiple-quantum-well (MQW) nipi structure.

© 1993 Optical Society of America

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