Abstract

GaAs MESFET (Metal-Semiconductor-Field-Effect Transistors) circuits available through the MOSIS service have been shown to be stable with no significant change in the Schottky gate or ohmic contact properties after 3 hours at 525°C ± 10°C. This allows one to build high density complex electronic circuitry with optical inputs and optical outputs by using lowered temperature MBE regrowth for the optical sources.

© 1993 Optical Society of America