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Dynamics of hole tunneling by means of strain effects in asymmetry-coupled quantum wells

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Abstract

Hole coherent tunneling in the valence band for strained AlInAs/InGaAs asymmetry coupled quantum well (ACQW) structures are investigated theoretically An ACQW system of a 41Å narrow well (unstrained well) and a 61Å wide well (strained well) separated by a 25Å barrier is taken into consideration. Dynamics of interwell coherent oscillations are described by a numerical implementation using the time-dependent Schrödinger equation 1 with the Luttinger-Kohn Hamiltonian as well as the Pikus-Bir Hamiltonian 2 Tunneling processes are demonstrated at different internal strains (lattice matched case biaxial compression, and biaxial tension) and external electric fields. The resonance oscillations of ground states wavepackets in adjacent wells occur at higher electric field (more negative) under biaxial compressive strain, and take place at lower electric field (close to zero) for biaxial tensile strained ACQWs. Moreover with a nonzero in plane wave vector (k//≠0) a strong resonance tunneling between the heavy and the light hole levels occurs at some electric field due to mixing effects, which are greatly enhanced by internal strains. This oscillation frequency is faster than the heavy-heavy holes spatial tunneling Both the tunneling probabilities and the oscillation frequencies are functions of mixing effects, electric field effects, and strain effects.

© 1993 Optical Society of America

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