RM3 Integration of Indium Phosphide Based 1.55 µm p-i-n Photodetectors with Silicon CMOS Optical Clock Receiver Circuits

Eralp Atmaca; Nigel Drego; Duane Boning; Clifton G. Fonstad; Loke Wan Khai; Yoon Soon Fatt

doi:10.1364/OC.2003.PD3

Optics in Computing
OSA Trends in Optics and Photonics (Optica Publishing Group, 2003),
paper PD3
•https://doi.org/10.1364/OC.2003.PD3

RM³ Integration of Indium Phosphide Based 1.55 µm p-i-n Photodetectors with Silicon CMOS Optical Clock Receiver Circuits

Eralp Atmaca, Nigel Drego, Duane Boning, Clifton G. Fonstad, Loke Wan Khai, and Yoon Soon Fatt

Optics in Computing 2003

Washington, D.C. United States
16–20 June 2003
ISBN: 1-55752-750-4

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E. Atmaca, N. Drego, D. Boning, C. G. Fonstad, L. W. Khai, and Y. S. Fatt, "RM3 Integration of Indium Phosphide Based 1.55 µm p-i-n Photodetectors with Silicon CMOS Optical Clock Receiver Circuits," in Optics in Computing, A. Sawchuk, ed., Vol. 90 of OSA Trends in Optics and Photonics (Optica Publishing Group, 2003), paper PD3.

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Abstract

Recess mounting with monolithic metallization, or RM³ integration, is being used to integrate a variety of optoelectronic devices on silicon CMOS circuits to produce high performance optoelectronic integrated circuits. In RM³ integration, partially processed heterostructure devices are placed in recesses formed in the dielectric layers covering the surface of an integrated circuit chip, the surface is planarized, and monolithic processing is continued to transform the heterostructures into optoelectronic devices monolithically integrated with the underlying electronic circuitry.

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