Finite Difference Beam Propagation Method Modeling for High Power Semiconductor Fanned-Out Amplifier Lasers

Joseph H. Abeles; Robert Amantea; Rafael Rios; Donald J. Channin

doi:10.1364/ODP.1993.PD.3

Optical Design for Photonics
Technical Digest Series (Optica Publishing Group, 1993),
paper PD.3
•https://doi.org/10.1364/ODP.1993.PD.3

Finite Difference Beam Propagation Method Modeling for High Power Semiconductor Fanned-Out Amplifier Lasers

Joseph H. Abeles, Robert Amantea, Rafael Rios, and Donald J. Channin

Optical Design for Photonics 1993

California United States
22–24 March 1993
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J. H. Abeles, R. Amantea, R. Rios, and D. J. Channin, "Finite Difference Beam Propagation Method Modeling for High Power Semiconductor Fanned-Out Amplifier Lasers," in Optical Design for Photonics, Technical Digest Series (Optica Publishing Group, 1993), paper PD.3.

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Abstract

High power single-mode semiconductor lasers are needed for applications such as optical computing, sensing, and data writing.

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