Two-Regime Hole Opening Process in Tellurium-Alloy Films

M. Chen; V. Marrello; U.G. Gerber

doi:10.1364/ODS.1983.WA2

Topical Meeting on Optical Data Storage
Technical Digest Series (Optica Publishing Group, 1983),
paper WA2
•https://doi.org/10.1364/ODS.1983.WA2

Two-Regime Hole Opening Process in Tellurium-Alloy Films

M. Chen, V. Marrello, and U.G. Gerber

Optical Data Storage 1983

Incline Village, Nevada United States
17–20 January 1983
ISBN:

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Write-Once Media and Mechanisms (WA)

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M. Chen, V. Marrello, and U. G. Gerber, "Two-Regime Hole Opening Process in Tellurium-Alloy Films," in Topical Meeting on Optical Data Storage, Technical Digest Series (Optica Publishing Group, 1983), paper WA2.

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Abstract

Single layer (≃ 300A thick) Te and Te-alloy films on polymethylmethacrylate substrates are widely studied for possible use as optical recording media. The ablative hole formation process in such media is however still poorly understood. In this paper, data is presented to show that ablative writing in Te-alloy films has two hole opening regimes. This two regime hole opening process is shown to lead to a qualitative understanding of the contrast ratio versus writing laser power characteristics of Te-alloy films.

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