Abstract
New recording material with higher crystallozation speed and higher thermal stability is required to realize a phase-change disc for higher data recording rate. We have developed a new phase-change material that is consist of Tb doped (SbTe)Ge material based on eutectic composition of SbTe. This new phase-change material improves the crystallization speed and the crystallization temperature simultaneously. We have achieved the practical use characteristic of data recording rate of 216 Mbps (6X-speed of Blu-ray Disc) by using Tb doped (SbTe)Ge material.
© 2003 Optical Society of America
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