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Ge/Al Bilayer Thin Film for Optical Write-once Media

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Abstract

Ge/Al bilayer thin films are prepared by magnetron sputtering. Thermal analysis shows that the phase change of the film occurs at 275 °C. Contrasts at 650 nm and 405 nm wavelength are 71.4% and 31.1% respectively.

© 2007 Optical Society of America

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