New Quasi-Planar-Structure InAlGaAs/InAlAs Superlattice Avalanche Photodiodes

I. Watanabe; M. Tsuji; K. Makita; K. Taguchi

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 19A1.3

New Quasi-Planar-Structure InAlGaAs/InAlAs Superlattice Avalanche Photodiodes

I. Watanabe, M. Tsuji, K. Makita, and K. Taguchi

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
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Photodetectors (19A1)

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I. Watanabe, M. Tsuji, K. Makita, and K. Taguchi, "New Quasi-Planar-Structure InAlGaAs/InAlAs Superlattice Avalanche Photodiodes," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 19A1.3.

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Abstract

Quasi-planar InAlGaAs/InAlAs superlattice avalanche photodiodes with a Ti-implanted guard-ring were proposed and fabricated for 10 Gb/s trunk line applications. They indicated higher reliability than that of mesa-structures with high-speed characteristics.

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