Monolithically Integrated Optoelectronic Multiplexer Circuit Using Light Emitting Transistors

Ying-Tzu Chen; Ya-Ting Liang; Chao-Hsin Wu

doi:10.1364/OECC.2021.T3E.2

26th Optoelectronics and Communications Conference
OSA Technical Digest (Optica Publishing Group, 2021),
paper T3E.2
•https://doi.org/10.1364/OECC.2021.T3E.2

Monolithically Integrated Optoelectronic Multiplexer Circuit Using Light Emitting Transistors

Ying-Tzu Chen, Ya-Ting Liang, and Chao-Hsin Wu

Optoelectronics and Communications Conference 2021

Hong Kong China
3–7 July 2021
ISBN: 978-1-943580-92-7

From the session
Optical Multiplexers (T3E)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
Y. Chen, Y. Liang, and C. Wu, "Monolithically Integrated Optoelectronic Multiplexer Circuit Using Light Emitting Transistors," in 26th Optoelectronics and Communications Conference, P. Alexander Wai, H. Tam, and C. Yu, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper T3E.2.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

In this paper, we demonstrate an optoelectronic multiplexer circuit using light-emitting transistors (LETs) on a GaAs substrate by a monolithically integrated fabrication process for use in optoelectronic integrated circuits (OEICs).

PDF Article

More Like This

Electronic-Photonic Integration Using the Light-Emitting Transistor

J. M. Dallesasse, P. L. Lam, and G. Walter
LTu3A.2 Latin America Optics and Photonics Conference (LAOP) 2014

Heterojunction bipolar transistor-based long-wavelength optoelectronic integrated circuits

S. Chandrasekhar
TuB3 Optical Fiber Communication Conference (OFC) 1991

Thermal Dynamic Performance and Integrated Optoelectronic System with InGaP / GaAs Quantum Well Light-Emitting Transistors (LETs)

Lu-Ching Hsueh, Hsin-Yu Lin, Mukul Kumar, and Chao-Hsin Wu
M5D.2 Asia Communications and Photonics Conference (ACP) 2021

Previous Article Next Article