Abstract
We proposed a new implement for high resolution near-field lithography based on the third-harmonic generation via tip enhancement. According to the time-domain finite-element analysis results, this lithographic technique could theoretically achieve 10nm-scale device line width, which is far less than that of the conventional lithography technique restricted by the diffraction limit.
© 2014 Optical Society of America
PDF ArticleMore Like This
Fanghui Ren, Xiangyu Wang, Zhongan Li, Jingdong Luo, Sei-Hum Jang, Alex K-Y Jen, and Alan X. Wang
FTh4K.8 CLEO: QELS_Fundamental Science (CLEO:FS) 2014
Toshihiro Mino, Yuika Saito, and Prabhat Verma
20a_C3_2 JSAP-OSA Joint Symposia (JSAP) 2014
Hao Hu and Yu Luo
s1155 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2017