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Quantum well intermixing of InGaAsP/InP laser structure by sputtering Al2O3

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Abstract

Experimental results on a new method of quantum well intermixing by sputtering Al2O3 is presented. A bandgap blueshift upto 100nm is obtained. A FP laser blue-shifted by 80nm is fabricated with low threshold current.

© 2014 Optical Society of America

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