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Temperature dependent photoluminescence study of exciton localization in Al0.2Ga0.8N epitaxial layer

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Abstract

Exciton localization effect has been observed in Al0.2Ga0.8N layer and localization energy of 10 meV has been obtained by analyzing the temperature dependent photoluminescence (PL) results. Two different thermal quenching mechanisms have been introduced to explain the quenching process of the PL intensity.

© 2015 Optical Society of America

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