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Conferences > OEDI > 2015 > JW3A > JW3A.65

Luminescence Properties of GaAs Quantum Dot-in-Nanowire Structure for Quantum Photonics

Li Wang, Ying Yu, Bin Wei, Shengcheng Mao, Xiaodong Han, Zhichuan Niu, and Yuan Ji

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Abstract

We investigate light characters of GaAs quantum dot-in-nanowire structure by cathodoluminscence. Exciton intensity of QDs is 5 times stronger than the nanowire. Promising properties attribute to cavity enhancement and quantum confinement by surrounding AlGaAs barriers.

© 2015 Optical Society of America

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