Abstract
Optical injection into a semiconductor laser is known to enhance many of its static and dynamic characteristics1 Reduction of relaxation oscillations and patterning effects and the narrowing of the spectral linewidth are frequently reported. Currently a worldwide interest exists in the realization of single longitudinal mode high-speed modulation of diode lasers with insensitivity to reflections and a good extinction ratio. The principal interest is at 1.55 μm where the narrow source linewidth would relax the requirement for total dispersion minimization and hence enable low fiber and joint losses to be more readily obtained; but applications also include measurement equipment, wavelength multiplexing, and heterodyne detection.
© 1981 Optical Society of America
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