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Ga0.47In0.53As/InP heterophotodiode with reduced dark current and high quantum efficiency

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Ga0.47In0.53As photodetectors are well suited for optical fiber telecommunications applications in the 1.1-1.6-µm region of the optical spectrum because these devices1-3 can be made with high quantum efficiency, low dark current, and are based on the same materials technology as the GaxIn1−xAsyP1−y optical emitter materials. However, the photodiode dark current must be <1 nA to have a negligible effect on detection sensitivity in the 1-50-Mbit/sec bit rate range. While the typical dark current in Ga0.47In0.53As homostructure diodes is at least 1 order of magnitude lower than that measured in Ge photodiodes, this figure is still several nanoamperes for a diode of dimensions suitable for optical fiber telecommunications (A≅5×10−5 cm2).

© 1981 Optical Society of America

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